Effect Of The Composition Of The Etching System MF-HCl (M = Li+, Na+, NH4+) on the gas-sensitive properties of Ti3C2Tх/Tioх nanocomposites
- Авторлар: Simonenko E.P.1,2, Mokrushin A.S.1, Nagornov I.A.1, Sapronova V.M.1,2, Gorban Y.M.1,2, Gorobtsov P.Y.1, Simonenko T.L.1, Simonenko N.P.1, Kuznetsov N.T.1
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Мекемелер:
- Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences
- D.I. Mendeleev Russian University of Chemical Technology
- Шығарылым: Том 69, № 4 (2024)
- Беттер: 607-623
- Бөлім: НЕОРГАНИЧЕСКИЕ МАТЕРИАЛЫ И НАНОМАТЕРИАЛЫ
- URL: https://rjonco.com/0044-457X/article/view/666583
- DOI: https://doi.org/10.31857/S0044457X24040164
- EDN: https://elibrary.ru/ZXIYZG
- ID: 666583
Дәйексөз келтіру
Аннотация
The influence of the nature of MF-HCl etching systems (M = Li+, Na+, NH4+) on the process of synthesis of Ti3C2Tx MXenes on the basis of Ti3AlC2 MAX-phase, microstructure, phase purity, interlayer distance, composition of functional surface groups, thermal behavior and yield of the obtained products has been studied. The room temperature sensing properties of Ti3C2Tx receptor layers deposited by microplotter printing were studied with respect to a wide range of gas analytes (H2, CO, NH3, NO2, NO2, O2, benzene, acetone, methane and ethanol). Increased sensitivity to ammonia was revealed for the MXenes obtained by exposure to hydrochloric acid solutions of sodium and ammonium fluorides and to carbon monoxide for the sample synthesized using the LiF-HCl system. High responses (~20–30% to 100 ppm NO2) were observed for all three receptor materials, but sensor recovery processes were significantly hampered. To improve the sensing characteristics, Ti3C2Tx sensing layers were subjected to relatively low-temperature heat treatment in an air atmosphere to form Ti3C2Tx/TiOx nanocomposites. It was found that a high and selective oxygen response at very low operating temperatures (125-175°C) was observed for the MXenes partially oxidized, which is particularly characteristic of the material produced using the HCl-NaF system.
Негізгі сөздер
Авторлар туралы
E. Simonenko
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences; D.I. Mendeleev Russian University of Chemical Technology
Хат алмасуға жауапты Автор.
Email: ep_simonenko@mail.ru
Ресей, Moscow, 119991; Moscow, 125047
A. Mokrushin
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences
Email: ep_simonenko@mail.ru
Ресей, Moscow, 119991
I. Nagornov
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences
Email: ep_simonenko@mail.ru
Ресей, Moscow, 119991
V. Sapronova
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences; D.I. Mendeleev Russian University of Chemical Technology
Email: ep_simonenko@mail.ru
Ресей, Moscow, 119991; Moscow, 125047
Yu. Gorban
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences; D.I. Mendeleev Russian University of Chemical Technology
Email: ep_simonenko@mail.ru
Ресей, Moscow, 119991; Moscow, 125047
Ph. Gorobtsov
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences
Email: ep_simonenko@mail.ru
Ресей, Moscow, 119991
T. Simonenko
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences
Email: ep_simonenko@mail.ru
Ресей, Moscow, 119991
N. Simonenko
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences
Email: ep_simonenko@mail.ru
Ресей, Moscow, 119991
N. Kuznetsov
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences
Email: ep_simonenko@mail.ru
Ресей, Moscow, 119991
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