Designing and manufacturing of fractal elements based on a resistance-capacitance medium

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

This work presents the experience of designing and manufacturing of fractal elements (FE) based on resistance capacitance media, in particular, based on a one-dimensional structurally uniform resistance-capacitance element with distributed parameters (RC-EDP) with R-C-NR (R-C-NR ЭРП) kind of a layer structure. It also presents the results of designing and manufacturing of thick film FE samples having constant phase of impedance –10°, –20°, –30° and –40° in the frequences range of 1.5 decade order. It gives the results of the comparative analysis of phase-frequency characteristics of the input impedance of the synthesized model and the manufactured sample.

Толық мәтін

Рұқсат жабық

Авторлар туралы

A. Gil’mutdinov

Kazan National Research Technical University named after A.N. Tupolev – KAI (KNITU-KAI); Scientific and Production Association “Radioelectronics” named after V.I. Shimko

Хат алмасуға жауапты Автор.
Email: agilmutdinov@rambler.ru
Ресей, K. Marks Str., 10, Kazan, 420111; Zhurnalistov Str., 50, Kazan, 420029

K. Maksimov

Izhevsk State Technical University named after M.T. Kalashnikov

Email: agilmutdinov@rambler.ru
Ресей, Studencheskaya Str., 7, Izhevsk, 426069

P. Ushakov

Izhevsk State Technical University named after M.T. Kalashnikov

Email: agilmutdinov@rambler.ru
Ресей, Studencheskaya Str., 7, Izhevsk, 426069

Әдебиет тізімі

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  3. Гильмутдинов А. Х. Резистивно-емкостные элементы с распределенными параметрами: анализ, синтез и применение. Казань: КГТУ, 2005.
  4. Фрактальные элементы: пионерские конструктивно-технологические реализации. М.: Физматлит, 2020.
  5. Мокляков В. А. Синтез фрактальных элементов на основе многослойной структурно-неоднородной резистивно-емкостной среды / Автореф. дисс. … канд. техн. наук. Казань: КГТУ им. А. Н. Туполева, 2009. 19 с.
  6. Гильмутдинов А. Х., Гильметдинов М. М. // Нелинейный мир. 2014. Т. 12. № 10. С. 43.
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  9. Гильмутдинов А. Х., Гоппе А. А. // Тр. научно-техн. конф. по итогам работы за 1992–93. Казань. 4–15 апреля 1994. Казань: КГТУ, 1994. С. 218.
  10. Гильмутдинов А. Х. // Вестник КГТУ им. А. Н. Туполева. 1997. № 1. С. 32.

Қосымша файлдар

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Әрекет
1. JATS XML
Жүктеу
2. Fig. 1. Basic design for the implementation of PV based on the R-C-NR ERP: a – layer structure; b – UGO of the i-th CRE; 1…4 – designations of the terminal numbers of the RCGNR structure, 1-i…4-i – designations of the terminal numbers of the i-th CRE.

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3. Fig. 2. Universal equivalent circuit of the elementary section ∆x FE OO R-C-NR ERP.

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4. Fig. 3. Results of the FE synthesis program operation at the impedance phase-frequency response constancy level of -30°: a - dialog box with the FE synthesis result; b - equivalent circuit of the synthesized FE corresponding to the “RCGNR structure topology” field of the dialog box; c - graph of the input impedance phase-frequency response of the synthesized FE.

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5. Fig. 4. Photo of the substrate with thick-film PV elements and control elements.

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6. Fig. 5. Phase-frequency characteristics of the input impedance of the FE with different φZin = φZ±∆φZ: –10°±1.5° (a), –20°±2° (b), –30°±2° (c) –40°±2° (d), for the synthesized model (1) and measured for the sample (2).

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7. Fig. 6. Fractal element based on the R-C-NR ERP with phase constancy φZвх = –30°: a – topological drawing; b – photo of the manufactured sample; 1 – conductors with contacts to the lower resistive layer (R layer), 2 – conductors with contacts to the upper resistive layer, 3 – upper resistive layer (NR layer), 4 – gaps in the upper resistive layer.

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8. Fig. 7. Equivalent circuit of the manufactured PV sample with phase constancy φZвх = –30° (Fig. 6b), made in OrCAD.

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9. Fig. 8. The FE model in the OrCAD program, similar to the equivalent circuit of the synthesized FE (see Fig. 3b).

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Метадеректер
10. Fig. 9. Phase-frequency characteristics of the input impedance of the FE with a phase constancy of -30°, obtained in the OrCAD program for the model shown in Fig. 8 (1) and 7 (2), as well as measured (3) for the manufactured sample (see Fig. 5c).

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