Effect of additional dielectric layer and grounded shield on rf characteristics of GaAs microwave monolithic integrated circuit elements in 3D-integrated modules

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Abstract

The effect of coating GaAs monolithic integrated circuit with a benzocyclobutene dielectric layer and grounded copper shield is investigated. Using electromagnetic simulation up to 40 GHz, changes of RF characteristics of microstrip and coplanar transmission lines, a Marshand balun, and a bandpass filter due to coating are demonstrated. It is shown that from the performance variation viewpoint, the application of lines is preferred in GaAs monolithic integrated circuits used in 3D-integrated modules with such the coating.

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About the authors

F. I. Sheyerman

Tomsk State University of Control Systems and Radioelectronics

Author for correspondence.
Email: fish@tusur.ru
Russian Federation, Lenin Avenue, 40, Tomsk, 634050

N. V. Goleneva

Tomsk State University of Control Systems and Radioelectronics

Email: fish@tusur.ru
Russian Federation, Lenin Avenue, 40, Tomsk, 634050

A. А. Kokolov

Tomsk State University of Control Systems and Radioelectronics

Email: fish@tusur.ru
Russian Federation, Lenin Avenue, 40, Tomsk, 634050

L. I. Babak

Tomsk State University of Control Systems and Radioelectronics

Email: fish@tusur.ru
Russian Federation, Lenin Avenue, 40, Tomsk, 634050

M. V. Cherkashin

Tomsk State University of Control Systems and Radioelectronics

Email: fish@tusur.ru
Russian Federation, Lenin Avenue, 40, Tomsk, 634050

P. V. Panasenko

SC «MERI»

Email: fish@tusur.ru
Russian Federation, Akademika Valieva Str., 6/1, Zelenograd, 124460

А. V. Volosov

SC «MERI»

Email: fish@tusur.ru
Russian Federation, Akademika Valieva Str., 6/1, Zelenograd, 124460

References

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  3. Банков С.Е., Курушин А.А. Электродинамика для пользователей САПР СВЧ. М.: Солон-Экспресс, 2017.
  4. Svensson С., Dermer G.E. // IEEE Trans. 2001. V. AP-24. № 2. P. 191.
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  6. Huang С.H., Chen C.H., Horng T.S. // Proc. 2009 Asia Pacific Microwave Conf. Singapore. 7–10 Dec. N.Y.: IEEE, 2009. P. 1004.
  7. Маттей Д.Л., Янг Л., Джонс Е.М.Т. Фильтры СВЧ, согласующие цепи и цепи связи. М.: Связь, 1972.

Supplementary files

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1. JATS XML
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2. Fig. 1. Passive devices of the MMIC: MPL (a); KPL (b); balun (c); bandpass filter on the MPL with side coupling (d).

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3. Fig. 2. Schematic diagram of the multilayer structure for electromagnetic modeling in the Momentum program as part of the ADS CAD system.

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4. Fig. 3. Design for modeling a transmission line with an upper shield in GaAs MMIC and frequency dependences of the parameters |S11|, |S21| for the MPL (a–c) and KPL (d–e): without VSV (1), with a VSV layer at t = 5 μm (2), 25 μm (3), 50 μm (4), 100 μm (5) and 100 μm (without VSV) (6).

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5. Fig. 4. Dependences of the average value of the wave impedance of the MPL (1, 2) and KPL (3, 4) with a screen in the X- (1, 3) and Ka-bands (2, 4) on the thickness t of the VSV layer (a), the numbers near the points indicate the average values of Z0 in the specified frequency subranges, in Ohms; the surface of the dependence of the wave impedance of the MPL on t and f for the frequency range of 8 ... 12 GHz (b).

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6. Fig. 5. Frequency characteristics of the parameters of the S21 (a) and S31 (b) ST parameters: without VSV (1), with VSV layer at t = 5 μm (2), 25 μm (3), 50 μm (4), 100 μm (5) .

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7. Fig. 6. Amplitude imbalance δS (a) and phase difference Dφ (b) of signals at the ST output: without VSV (1) and with VSV layer at t = 5 μm (2).

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8. Fig. 7. The influence of the VSV layer and the screen on the frequency response of a bandpass filter without VSV (1), with a VSV layer at t = 5 μm (2), 25 μm (3), 50 μm (4), 100 μm (5).

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