Spin properties of chiral SiC nanotubes

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Using the relativistic linearized augmented cylindrical waves technique, the dependences of the band structure of single-walled SiC nanotubes on spin and chirality were calculated. It has been established that nanotubes are the wide-gap semiconductors with Eg equal to 2.26–3.15 eV, and the spin-orbit splittings of the valence and conduction band edges lie in the range of 0.05–3.5 meV. The energies of the spin-orbit gaps in righthanded and lefthanded enantiomers coincide, but their spin directions are opposite. Chiral nanotubes are determined that are most suitable for selective spin transport with potentially high fluxes of α- and β-electrons in opposite directions.

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Sobre autores

P. Dyachkov

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Autor responsável pela correspondência
Email: p_dyachkov@rambler.ru
Rússia, Moscow, 119991

P. Kulyamin

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: p_dyachkov@rambler.ru
Rússia, Moscow, 119991

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2. Fig. 1. Structure of a typical SiC nanotube

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3. Fig. 2. Electron and spin levels of a chiral nanotube (7, 5): general view of the band structure without taking into account the effects of spin-orbit splitting (a), enlarged image of electron levels in the region of the edges of the valence and conduction bands (b), spin-orbit splitting of the edges of these bands in right-handed (rh) (c) and left-handed (lh) nanotubes (d). The value of π/h = 6.39 a.u.–1

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4. Fig. 3. Electron and spin levels of nanotubes (7, n2). Energy of gaps between the valence and conduction bands (a), spin-orbit splitting of the band edges in right-handed nanotubes (b)

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