On the Laser Generation in Two-Dimensional Materials with Pumping by Quasitrapped Modes

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Abstract

A model has been proposed to describe the laser generation of two-dimensional semiconductor films with near-field pumping by quasitrapped modes excited in dielectric metasurfaces. A metastructure consisting of a Si metasurface coated with a MoTe2 film, where narrow-band resonance of a quasitrapped mode is joined with a broad exciton resonance of a two-dimensional material, has been designed. Threshold conditions for generation in the MoTe2 film with pumping by quasitrapped modes have been determined. The possibility of polarization control of the emission of the proposed metastructure has been demonstrated.

About the authors

M. Yu. Gubin

Department of Physics and Applied Mathematics, Vladimir State University; Center of Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology (National Research University)

Email: alprokhorov33@gmail.com
600000, Vladimir, Russia; 141701, Dolgoprudnyi, Moscow region, Russia

A. V. Shesterikov

Department of Physics and Applied Mathematics, Vladimir State University; Center of Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology (National Research University)

Email: alprokhorov33@gmail.com
600000, Vladimir, Russia; 141701, Dolgoprudnyi, Moscow region, Russia

V. S. Volkov

Center of Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology (National Research University)

Email: alprokhorov33@gmail.com
141701, Dolgoprudnyi, Moscow region, Russia

A. V. Prokhorov

Department of Physics and Applied Mathematics, Vladimir State University; Center of Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology (National Research University)

Author for correspondence.
Email: alprokhorov33@gmail.com
600000, Vladimir, Russia; 141701, Dolgoprudnyi, Moscow region, Russia

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