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Interference Transport in a Two-Dimensional Topological Insulator in a CdHgTe Quantum Well
- Authors: Ryzhkov M.S1,2, Kozlov D.A1,3, Khudayberdiev D.A1, Kvon Z.D1,2, Mikhaylov N.N1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Experimental and Applied Physics, University of Regensburg
- Issue: Vol 117, No 1-2 (1) (2023)
- Pages: 50-54
- Section: Articles
- URL: https://rjonco.com/0370-274X/article/view/663576
- DOI: https://doi.org/10.31857/S1234567823010068
- EDN: https://elibrary.ru/NVHYAF
- ID: 663576
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Abstract
Interference transport in mesoscopic samples of a two-dimensional topological insulator in CdHgTe quantum wells is studied for the first time. It is established that quasi-ballistic edge transport in such an insulator exists at lengths up to 10 µm. In this transport regime, almost periodic Aharonov–Bohm oscillations caused by the formation of closed loops with a characteristic size of about 200 nm by edge states are found. The phase coherence length in the two-dimensional topological insulator is determined for the first time from the measured temperature dependence of their amplitude.
About the authors
M. S Ryzhkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: dimko@isp.nsc.ru
630090, Novosibirsk, Russia; 630090, Novosibirsk, Russia
D. A Kozlov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Experimental and Applied Physics, University of Regensburg
Email: dimko@isp.nsc.ru
630090, Novosibirsk, Russia; D-93040, Regensburg, Germany
D. A Khudayberdiev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dimko@isp.nsc.ru
630090, Novosibirsk, Russia
Z. D Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: dimko@isp.nsc.ru
630090, Novosibirsk, Russia; 630090, Novosibirsk, Russia
N. N Mikhaylov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: dimko@isp.nsc.ru
630090, Novosibirsk, Russia
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