Magnetic Properties of an SrMnO3/La0.7Sr0.3MnO3 Heterostructure on an NdGaO3 Substrate
- Authors: Shaykhulov T.A1, Safin A.R1,2, Stankevich K.L3, Matasov A.V2, Temiryazeva M.P1, Vinnik D.A4, Zhivulin V.E4, Nikitov S.A1,5
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Affiliations:
- Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, 141190, Fryazino, Moscow region, Russia
- National Research University MPEI, 111250, Moscow, Russia
- Moscow State University, 119991, Moscow, Russia
- South Ural State University, 454080, Chelyabinsk, Russia
- Moscow Institute of Physics and Technology (National Research University), 141701, Dolgoprudnyi, Moscow region, Russia
- Issue: Vol 117, No 7-8 (4) (2023)
- Pages: 620-625
- Section: Articles
- URL: https://rjonco.com/0370-274X/article/view/664142
- DOI: https://doi.org/10.31857/S1234567823080104
- EDN: https://elibrary.ru/WGOHCH
- ID: 664142
Cite item
Abstract
An epitaxial heterostructure based on strontium and lanthanum-strontium manganite films (
and @) is studied. Ferromagnetic resonance spectra, angular dependences of the resonance field for different temperatures, in-plane and cubic anisotropy as well as the temperature dependences of the magnetization, were measured. The obtained magnetic parameters of the heterostructure were compared with the magnetic parameters of a single @ film. We assume that the existence of an interlayer exchange at the ferromagnet-antiferromagnet interface at low temperatures leads to the appearance of unidirectional anisotropy in the heterostructure @/@. We believe that the presented results will be useful for the practical development of antiferromagnet-based ultrafast devices: emitters, amplifiers, detectors.
About the authors
T. A Shaykhulov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, 141190, Fryazino, Moscow region, Russia
Email: shcaihulov@hitech.cplire.ru
A. R Safin
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, 141190, Fryazino, Moscow region, Russia; National Research University MPEI, 111250, Moscow, Russia
Email: shcaihulov@hitech.cplire.ru
K. L Stankevich
Moscow State University, 119991, Moscow, Russia
Email: shcaihulov@hitech.cplire.ru
A. V Matasov
National Research University MPEI, 111250, Moscow, Russia
Email: shcaihulov@hitech.cplire.ru
M. P Temiryazeva
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, 141190, Fryazino, Moscow region, Russia
Email: shcaihulov@hitech.cplire.ru
D. A Vinnik
South Ural State University, 454080, Chelyabinsk, Russia
Email: shcaihulov@hitech.cplire.ru
V. E Zhivulin
South Ural State University, 454080, Chelyabinsk, Russia
Email: shcaihulov@hitech.cplire.ru
S. A Nikitov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, 141190, Fryazino, Moscow region, Russia; Moscow Institute of Physics and Technology (National Research University), 141701, Dolgoprudnyi, Moscow region, Russia
Author for correspondence.
Email: shcaihulov@hitech.cplire.ru
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