卷 49, 编号 5 (2023)

Using computer methods (ToposPro software package), a combinatorial topological analysis and modeling of the self-assembly of the following crystal structures are carried out: Y20Cu20Mg64-oC104 (a = 4.136 Å, b = 19.239 Å, c = 29.086 Å, V = 2314.45 Å3, Cmcm), Y20Cu20Mg52-oC92 (a = 4.097 Å, b = 19.279 Å, c = 25.790 Å, V = 2037.30 Å3, Cmcm), and Y3(NiAl3)Ge2-hP9 (a = b = 6.948 Å, c = 4.156 Å, V = 173.78 5 Å3, P-62m). For the Y20Cu20Mg64-oC104 crystal structure, 52 variants of the cluster representation of the 3D atomic network with the 3, 4, and 5 structural units are established. Four crystallographically independent structural units in the form of a tetrahedron are determined: tetrahedron K4 = 0@CuMg3, tetrahedron K4 = 0@YMg3, tetrahedron K4 = 0@YCuMg2, and a supratetrahedron K6 = 0@YCu2Mg3. A variant of self-assembly with the participation of hexamers from six linked structural units is considered (K4B+ K4C)(K4A+ K6)(K4B+ K4C). For the Y20Cu20Mg64-oC92 crystal structure, 27 variants of cluster representation of the 3D atomic mesh with 3, 4, and 5 structural units are established. Three crystallographically independent structural units in the form of a tetrahedron are determined: tetrahedron K4 = 0@YCuMg2, cluster K6 = 0@6(Y2Mg4) in the form of double tetrahedrons YMg3, and a nine-atom supratetrahedron K9 = Mg@Y2Cu2Mg4 consisting of two YMg2Cu and two YMg3 tetrahedrons. A variant of the self-assembly involving trimers of three structural units K4+ K6+ K9 is considered. For the Y3(NiAl3)Ge2-hP9 crystal structure, eight variants of decomposition of the 3D atomic mesh into cluster structures with the participation of two structural units are established. A variant of the self-assembly with the participation of packing generatrices of seven-atom clusters-precursors K7 = 0@Y3(NiAl3) with the participation of Ge atoms-spacers is considered. The symmetry and topological code of the self-assembly processes of 3D-structures is reconstructed from clusters-precursor in the following form: primary chain → layer → framework.

This paper discusses the technology of formation of photoresistive structures based on a composite of lead selenide and lead selenite. The structures are formed by the oxidation of n-PbSe polycrystalline films. Film The surface modification mechanism of n-PbSe films in the oxidation process is analyzed by a Zeiss Merlin scanning electron microscope (SEM). The new results of the authors on the oxidation mechanism of n-PbSe, together with their earlier publications, are summarized and their consistency with each other is examined. A theoretical model (hypothesis) of the potential profile of a photosensitive heterojunction is proposed, in which each crystal of the n-PbSe film during oxidation in an atmosphere of dry air forms a continuous shell on the p-PbSeO3 surface. The hypothesis on the structural model of the photosensitive heterojunction proposed by other authors, which is based on the oxidation mechanism proposed by us, is practically confirmed in this study.

Crystals of a novel hybrid organo-inorganic borate, K[B5O6(OH)4][B(OH)3]2(H2O)(C10H20O5)2 (1), were obtained from aqueous solutions and characterized by single-crystal X-ray diffraction and IR spectroscopy. 1 is triclinic (a = 10.1567(4), b = 11.9941(6), c = 17.1893(9) Å, α = 75.280(4), β = 79.406(4), γ = 88.531(4)°, V = 1990.270369 Å3, SG P-1; R1 = 0.058). Its structure contains [K(C10H20O5)2]+ groups which behave as “hydrophobic” templates for the inorganic part comprised of B5O6(OH)4 anions and neutral B(OH)3 molecules.

A method for reinforcing a compound based on styrene-butadiene thermoplastic elastomer has been developed. The mechanical characteristics of reinforced compounds have been studied. A comparative analysis of various methods for introducing a nanofiller into a polymer matrix has been carried out. The developed technique shows an increase in the compressive strength of the composition by 50%, as well as tensile strength by 20%.

Рассмотрены особенности формирования скрытого свинцово-силикатного изолирующего слоя в кремниевых подложках. Для этого в них последовательно имплантировались ионы молекулярного кислорода и свинца в атомарном соотношении 75 : 1, затем производились отжиги при температуре 1150°C в среде сухого кислорода. Распределение имплантированных ионов в экспериментальных образцах регистрировалось методом вторичной ионной масс-спектрометрии. Показано, что скрытый изолятор формируется в процессе спинодального распада твердого раствора SiO_x–PbO_x в виде трехслойной структуры. Средняя ее часть представляет собой диоксид кремния, легированный ионами свинца, боковые части состоят из свинцово-силикатной фазы. Для анализа профиля распределения свинца предложена модель релаксационной диффузии.