Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor

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Аннотация

The results of a study of the temperature dependences of the breakdown voltage of high-power nLDMOS transistors with a long drift region with topological norms of 0.5 microns are discussed. The main attention is focused on the effect of the mechanism of generation and passivation of traps at the Si/SiO2 interface in strong electric fields. The dependence of the breakdown voltage in the ambient temperature range from -60 °C to 300 °C has been experimentally and theoretically analyzed and the temperature range from 25 °C to 220 °C, where the breakdown voltage is almost constant, has been determined. The possibility of restoring the breakdown voltage level after a long period of rest is considered, which is a prerequisite for extending the life of the device.

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Авторлар туралы

А. Novoselov

Federal State Institution Federal Scientific Center Scientific Research Institute of System Research of the Russian Academy of Sciences

Email: volkov@niisi.ras.ru
Ресей

М. Gusev

Federal State Institution Federal Scientific Center Scientific Research Institute of System Research of the Russian Academy of Sciences

Email: volkov@niisi.ras.ru
Ресей

N. Masalsky

Federal State Institution Federal Scientific Center Scientific Research Institute of System Research of the Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: volkov@niisi.ras.ru
Ресей

Әдебиет тізімі

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2. Fig. 1. Experimental data: change in breakdown voltage (Ubr) from the number of cycles N at different temperatures: a) top – bottom – T = -60°C, 0°C, 25°C; b) top – bottom – T = 225°C, 125°C, 25°C; lower curve – T = 300°C.

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3. Fig. 2. Distributions of activation energies of the Si-H bond at the beginning of each phase for constant voltage Uds, where 1 is at the beginning of the first recovery cycle (truncated Gauss), 2 is at the beginning of the fourth cycle.

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4. Fig. 3. Energy distribution at the beginning of the first cycle (dashed line) and at different points during the first phase (solid lines).

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5. Fig. 4. Dependence of mobility degradation on changes in trap concentration.

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6. Fig. 5. Dependence Ubr(T), where black squares are experimental values, solid line is calculation.

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7. Fig. 6. Dependence Ubr(T).

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