Influence of Manufacture Imperfections and Electrical Noise on Evolution of a Charge Qubit under Optical Control

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Дәйексөз келтіру

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Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

Semiconductor charge qubits based on a double quantum dot in an optical microcavity (a photonic crystal defect) are considered taking into account deviations of parameters from preset ones. Influence of topological disorder of a photonic crystal structure on microcavity spectrum and effect of a stochastic field of external charges on the qubit state are analyzed. Ways to attenuate these effects and to optimize the qubit state storage are indicated.

Толық мәтін

Рұқсат жабық

Авторлар туралы

A. Tsukanov

NRC “Kurchatov Institute”

Хат алмасуға жауапты Автор.
Email: tsukanov@ftian.ru
Ресей, Moscow

I. Kateev

NRC “Kurchatov Institute”

Email: ikateyev@mail.ru
Ресей, Moscow

Әдебиет тізімі

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2. Fig. 1. Top: vertical section of the chip in the MR region along the horizontal x-axis connecting the centers of CT A and CT B of the cubit. The qubit is located in a highly purified intrinsic (neutral) semiconductor, which is separated from the layer with the electron reservoir by a spacer barrier. The reservoir is in contact with a metal electrode. Bottom: horizontal section of the chip in the x-y plane in the MR region based on two-dimensional FC with S3 defect.

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3. Fig. 2. Two-dimensional TE-mode electric field distribution for FC 1 (a) and FC 2 (b), whose parameters are given in the text.

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4. Fig. 3. Dependence of the intrinsic wavelength λc1 of the mode and the maximum amplitude of the single-photon electric field Ec1 on the standard deviation σR of the radius R of the holes of PC 1 (a), as well as the dependence of the time-averaged electric field E on the wavelength λ of the photon (optical spectrum) at different values of R (b).

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5. Fig. 4. Dependence of the intrinsic wavelength λc2 of the mode and the maximum amplitude of the single-photon electric field Ес2 on the standard deviation σR of the radius R of the holes of FC 2.

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6. Fig. 5. Dependence of the intrinsic wavelength λc1 of the mode and the maximum amplitude of the single-photon electric field Ес1 on the standard deviation σa of the constant lattice a of the holes of the FC 1.

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7. Fig. 6. Plots of dependences of the mean value of reproduction accuracy on time for three values of electric field strength. The system parameters in effective units are given in the inset.

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8. Fig. 7. Plots of dependences of the mean value of reproduction accuracy on time for three values of electron concentration in the tank with the electric field on/off. The system parameters in effective units are given in the inset.

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9. Fig. 8. Plots of time dependences of reproduction accuracy for two values of the distance from the cubit to the reservoir in a strong electric field. The system parameters in effective units are given in the inset.

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10. Fig. 9. Plots of time dependences of reproduction accuracy with open drain. System parameters in effective units are given in the inset.

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