Tunnel Breakdown Bipolar Transistor

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The article considers a bipolar transistor operating under tunnel breakdown of the collector junction. The equivalent circuit of the transistor is built from two low-voltage Zener diodes connected towards each other. Integrated circuits on complementary transistors with tunnel breakdown can be manufactured on a single crystal using CMOS technology. Experimental and theoretical studies of the physical model of the transistor are carried out. The processes of injection and extraction of charge carriers under tunnel breakdown of the collector junction lead to a decrease in the role of barrier capacitances of p-n junctions and a significant increase in the switching speed of the transistor. It is revealed that the standard SPICE model of the diode does not quantitatively reproduce the experimental data for Zener diodes with tunnel breakdown. A new expression is proposed that correctly describes the volt-ampere characteristic for this case in a wide voltage range. The transistor breakdown condition is obtained and the breakdown voltage is calculated.

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作者简介

S. Rekhviashvili

Institute of Applied Mathematics and Automation KBSC RAS

编辑信件的主要联系方式.
Email: rsergo@mail.ru
俄罗斯联邦, Nalchik

D. Gaev

Kabardino-Balkarian State University

Email: rsergo@mail.ru
俄罗斯联邦, Nalchik

参考

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2. Fig. 1. Equivalent circuit diagram of the transistor with tunneling breakdown (a) and the circuit for the study of static and dynamic characteristics (b).

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3. Fig. 2. Voltage transfer characteristic of the circuit in Fig. 1b (a) and VAC of the diode (b): circles - experimental data; solid lines - calculations by SPICE-model and formula (1).

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4. Fig. 3. Oscillograms of signals of the circuit in Fig. 1b: (a) - experiment; (b) - SPICE-modeling.

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5. Fig. 4. Typical structure of matched bipolar transistors with tunneling breakdown.

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