Conductivity Study of Carbon Nanotubes Deposited on Iridium Silicon-Silicide Substrate

Realization of any elements at the nanometer level at this stage of nanoelectronics development is possible only under the condition of integration with industrial microelectronics technology. The limiting factor becomes the realization of the interface of two levels of technology: nano and micro. The crisis of metallic interconnects entering a new phase, associated with increasing delays in wiring, levels the merits of nanostructures possessing ballistic conduction mechanism [1–4]. Nanotubes possess metallic or semiconductor type conductivity depending on the chirality angle in diameter. Accordingly, the former can fulfill the role of ideal contacts to devices based on molecular or tunnel structures or radiation sources, while the latter claim to be active elements of nanoelectronics rectifying diodes, transistors, chemical and biological sensors.