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Keywords Förster effect bipolar transistor charge qubit dissociation etching fluorocarbon gases gas temperature ionization kinetics mechanism memristor modeling molecular beam epitaxy plasma polymerization quantum dot radiation intensity reduced electric field strength resistive switching silicon specific power
Current Issue Cover Page

Vol 53, No 6 (2024)

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Keywords Förster effect bipolar transistor charge qubit dissociation etching fluorocarbon gases gas temperature ionization kinetics mechanism memristor modeling molecular beam epitaxy plasma polymerization quantum dot radiation intensity reduced electric field strength resistive switching silicon specific power
Current Issue Cover Page

Vol 53, No 6 (2024)

Home > Search > Browse Section Index > ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ

ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ

Issue Title File
Vol 52, No 5 (2023) The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma PDF
(Rus)
Efremov A.M., Smirnov S.A., Betelin V.B.
Vol 52, No 4 (2023) Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures PDF
(Rus)
Efremov A.M., Bobylev A.V., Kwon K.
1 - 2 of 2 Items
 

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