Mikroèlektronika
ISSN 0544-1269 (Print)
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Keywords
Förster effect
bipolar transistor
charge qubit
dissociation
etching
fluorocarbon gases
gas temperature
ionization
kinetics
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power
Current Issue
Vol 53, No 6 (2024)
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Keywords
Förster effect
bipolar transistor
charge qubit
dissociation
etching
fluorocarbon gases
gas temperature
ionization
kinetics
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power
Current Issue
Vol 53, No 6 (2024)
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Author Details
Author Details
Sarychev, M. E.
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Title
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Vol 53, No 3 (2024)
МОДЕЛИРОВАНИЕ
Kinetics of electromigration mass transfer in micro- and nanoelectronics interface elements depending on the strength of thin-film junctions
Vol 52, No 5 (2023)
МОДЕЛИРОВАНИЕ
Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials
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