Development of the Ge-MDST instrument structure with an induced p-type channel

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Abstract

The conditions for the growth of n-type Ge conduction layers by the HW CVD method with the parameters required to create a Ge-TIR transistor with an induced p-type channel are determined. The conditions of deposition by electron beam deposition and subsequent annealing of layers of a high-k dielectric ZrO2:Y2O3 are optimized, allowing to achieve a leakage current of 5 × 10–6 A/cm2. For the developed instrument structure, some parameters of the Ge-TIR transistor were calculated, such as the channel length, the maximum voltage between the drain and the source, and the breakdown voltage.

About the authors

N. A. Alyabina

Nizhegorodsky State University named after N.I. Lobachevsky

Email: asya_titova95@mail.ru
Russian Federation, Nizhny Novgorod

E. A. Arkhipova

Institute of Microstructure Physics of the Russian Academy of Sciences

Email: asya_titova95@mail.ru
Russian Federation, Afonino

Yu. N. Buzynin

Nizhegorodsky State University named after N.I. Lobachevsky; Institute of Microstructure Physics of the Russian Academy of Sciences

Email: asya_titova95@mail.ru
Russian Federation, Nizhny Novgorod; Afonino

S. A. Denisov

Nizhegorodsky State University named after N.I. Lobachevsky

Email: asya_titova95@mail.ru
Russian Federation, Nizhny Novgorod

A. V. Zdoroveishchev

Nizhegorodsky State University named after N.I. Lobachevsky

Email: asya_titova95@mail.ru
Russian Federation, Nizhny Novgorod

A. M. Titova

Nizhegorodsky State University named after N.I. Lobachevsky

Author for correspondence.
Email: asya_titova95@mail.ru
Russian Federation, Nizhny Novgorod

V. Yu. Chalkov

Nizhegorodsky State University named after N.I. Lobachevsky

Email: asya_titova95@mail.ru
Russian Federation, Nizhny Novgorod

V. G. Shengurov

Nizhegorodsky State University named after N.I. Lobachevsky

Email: shengurov@phys.unn.ru
Russian Federation, Nizhny Novgorod

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