| Issue |
Title |
File |
| Vol 53, No 6 (2024) |
Modeling of Structural Properties and Transport Phenomena in Doped Multicomponent 2D Semiconductors |
(Rus)
|
|
Asadov S.M., Mustafaeva S.N., Mammadov A.N., Lukichev V.F.
|
| Vol 53, No 5 (2024) |
Parameters matching of the thermoelectric system parameters for cooling heat-loaded electronics elements |
(Rus)
|
|
Vasil’ev Е.N.
|
| Vol 53, No 5 (2024) |
Investigation of ways to synthesize concurrent error-detection circuits based on boolean signals correction using uniform separable codes |
(Rus)
|
|
Efanov D.V., Yelina E.I.
|
| Vol 53, No 5 (2024) |
Electron transport and field electron emission mechanisms in 2D noncrystalline hetero structures with quantum barrier |
(Rus)
|
|
Krasnikov G.Y., Bokarev V.P., Teplov G.S., Yafarov R.K.
|
| Vol 53, No 5 (2024) |
Mathematical modeling of a microprocessor liquid cooling system |
(Rus)
|
|
Andreev А.I., Semenov A.E.
|
| Vol 53, No 4 (2024) |
Approximation of the Absorption Spectrum of Indium Phosphide in the Context of Simulation of the Process of Sensitivity Enhancement |
(Rus)
|
|
Makarenko P.V., Zolnikov V.K., Zarevich A.I., Zalenskaya N.Y., Poluektov A.V.
|
| Vol 53, No 3 (2024) |
Kinetics of electromigration mass transfer in micro- and nanoelectronics interface elements depending on the strength of thin-film junctions |
(Rus)
|
|
Makhviladze T.M., Sarychev M.E.
|
| Vol 53, No 3 (2024) |
Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs |
(Rus)
|
|
Kagadey V.A., Kodorova I.Y., Polyntsev E.S.
|
| Vol 53, No 3 (2024) |
Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate |
(Rus)
|
|
Masalsky N.V.
|
| Vol 53, No 2 (2024) |
Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state |
(Rus)
|
|
Asadov S.M.
|
| Vol 53, No 2 (2024) |
Application of the finite element method for calculating the surface acoustic wave parameters and devices |
(Rus)
|
|
Koigerov A.S.
|
| Vol 53, No 2 (2024) |
The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits |
(Rus)
|
|
Chumakov A.I.
|
| Vol 53, No 1 (2024) |
Modeling of Physical-Chemical and Electronic Properties of Lithium-Containing 4H—SiC and Binary Phases of the Si—C–Li System |
(Rus)
|
|
Asadov M.M., Huseynova S.S., Mustafaeva S.N., Mammadova S.O., Lukichev V.F.
|
| Vol 53, No 1 (2024) |
Modeling of the Electronic Properties of M-Doped Supercells (М = Zr, Nb) with a Monoclinic Structure For Lithium-Ion Batteries |
(Rus)
|
|
Asadov M.M., Mammadova S.O., Mustafaeva S.N., Huseynova S.S., Lukichev V.F.
|
| Vol 52, No 6 (2023) |
Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire |
(Rus)
|
|
Pozdnyakov D.V., Borzdov A.V., Borzdov V.M.
|
| Vol 52, No 6 (2023) |
Performance calculation for a MEMS switch with «floating» electrode |
(Rus)
|
|
Morozov M.O., Uvarov I.V.
|
| Vol 52, No 5 (2023) |
Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials |
(Rus)
|
|
Makhviladze T.M., Sarychev M.E.
|
| Vol 52, No 5 (2023) |
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure |
(Rus)
|
|
Sirotkin V.V.
|
| Vol 52, No 4 (2023) |
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric |
(Rus)
|
|
Masalskii N.V.
|
| Vol 52, No 4 (2023) |
Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film |
(Rus)
|
|
Kuznetsova I.A., Savenko O.V., Romanov D.N.
|
| Vol 52, No 3 (2023) |
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor |
(Rus)
|
|
Tsunvaza D., Ryzhuk R.V., Vasil’evskii I.S., Kargin N.I., Klokov V.A.
|
| Vol 52, No 3 (2023) |
Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery |
(Rus)
|
|
Asadov M.M., Mammadova S.O., Huseynova S.S., Mustafaeva S.N., Lukichev V.F.
|
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